Part Number | DS1230W-100IND |
Main Category | Integrated Circuits (ICs) |
Sub Category | Memory |
Brand | Silicon |
Description | IC NVSRAM 256KBIT 100NS 28EDIP |
Series | - |
Packaging | Tube |
Memory Type | Non-Volatile |
Memory Format | NVSRAM |
Technology | NVSRAM (Non-Volatile SRAM) |
Memory Size | 256Kb (32K x 8) |
Clock Frequency | - |
Write Cycle Time - Word, Page | 100ns |
Access Time | 100ns |
Memory Interface | Parallel |
Voltage - Supply | 3 V ~ 3.6 V |
Operating Temperature | -40°C ~ 85°C (TA) |
Mounting Type | Through Hole |
Package / Case | 28-DIP Module (0.600", 15.24mm) |
Supplier Device Package | 28-EDIP |
Image |
DS1230W-100IND+
SIILCON
5000
1.02
HITO TECHNOLOGY LIMITED
DS1230W-100IND
SILICON7
5000
2.305
HITO TECHNOLOGY LIMITED
DS1230W-100IND+
SiliconLabs
4280
3.59
Z.H.T TECHNOLOGY HK LIMITED
DS1230W-100IND
SILICON LABORATORIES INC
1497
4.875
Z.H.T TECHNOLOGY HK LIMITED
DS1230W-100IND+
SILICONLA
10750
6.16
Ande Electronics Co., Limited