(4/5) based on 12 customer reviews
Description
www.vishay.com. S09-0046-Rev. A, 19-Jan-09. 1. Power MOSFET. IRF9610 , SiHF9610. Vishay Siliconix. FEATURES. Dynamic dV/dt Rating. P-Channel. + HIGH VOLTAGE. HIGH VOLTAGE. HIGH. VOLTAGE. GROUND. ISOLATION. BARRIER. HIGH. VOLTAGE. LOAD. IN A. GATE+. IN B. C8. 6.8nF. Q2. IRF9610 . Page 1. www.irf.com. 1. IRF9610PbF. PD- 95413. 06/15/04. Lead-Free. Page 2. IRF9610PbF. 2 www.irf.com. Page 3. IRF9610PbF www.irf.com. 3 Page 1. Document Number: 91023 www.vishay.com. S11-0510-Rev. B, 21-Mar- 11. 1. This datasheet is subject to change without notice. THE PRODUCT D1 and D2 are for protection from lightning. R8 and R9 subdue the high frequency MOSFET demons in Q1 and Q2. IN A. GATE+. IN B. C8. 6.8nF. Q2. IRF9610 .
| Part Number | IRF9610 |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Single |
| Brand | Silicon |
| Description | MOSFET P-CH 200V 1.8A TO-220AB |
| Series | - |
| Packaging | Tube |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 200V |
| Current - Continuous Drain (Id) @ 25°C | 1.8A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | - |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 11nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 170pF @ 25V |
| Vgs (Max) | - |
| FET Feature | - |
| Power Dissipation (Max) | 20W (Tc) |
| Rds On (Max) @ Id, Vgs | 3 Ohm @ 900mA, 10V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220AB |
| Package / Case | TO-220-3 |
| Image |  |
IRF9610
SIILCON
986
1.24
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FLOWER GROUP(HK)CO.,LTD
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N&S Electronic Co., Limited
