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Description
c. ISD - 6.7 A, dI/dt 90 A/ s, VDD VDS, TJ 175 C. d. 1.6 mm from case. e. Uses IRF9Z14 , SiHF9Z14 data and test conditions. PRODUCT SUMMARY. DESCRIPTION. The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Aug 25, 1997 Uses IRF9Z14 data and test conditions. Parameter. Min. Typ. Max. Units. Conditions. IS. Continuous Source Current. MOSFET symbol. Aug 25, 1997 Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per LT 1166 AB . .
| Part Number | IRF9Z14 |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Single |
| Brand | Silicon |
| Description | MOSFET P-CH 60V 6.7A TO-220AB |
| Series | - |
| Packaging | Tube |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 6.7A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | - |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 12nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 270pF @ 25V |
| Vgs (Max) | - |
| FET Feature | - |
| Power Dissipation (Max) | 43W (Tc) |
| Rds On (Max) @ Id, Vgs | 500 mOhm @ 4A, 10V |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220AB |
| Package / Case | TO-220-3 |
| Image |  |
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