Part Number | IRF9Z20 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Silicon |
Description | MOSFET P-CH 50V 9.7A TO-220AB |
Series | - |
Packaging | Tube |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 50V |
Current - Continuous Drain (Id) @ 25°C | 9.7A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 26nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 480pF @ 25V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 40W (Tc) |
Rds On (Max) @ Id, Vgs | 280 mOhm @ 5.6A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220AB |
Package / Case | TO-220-3 |
Image |
IRF9Z20
SIILCON
412
0.68
Yingxinyuan INT'L (Group) Limited
IRF9Z20
SILICON7
21063
1.7575
N&S Electronic Co., Limited
IRF9Z20
SiliconLabs
50000
2.835
Gallop Great Holdings (Hong Kong) Limited
IRF9Z20
SILICON LABORATORIES INC
10000
3.9125
Hong Kong Capital Industrial Co.,Ltd
IRF9Z20
SILICONLA
63
4.99
KDH SEMICONDUCTOR CO., LIMITED