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Description
DATASHEET Mar 21, 2011 SiHFBC30-E3. SnPb. IRFBC30 . SiHFBC30. ABSOLUTE MAXIMUM RATINGS ( TC = 25 C, unless otherwise noted). PARAMETER. SYMBOL. On Semi. 1. Q4. IRFBC30 . MOSFET, N-ch, 600-V, 3.6-A, 1.8-Ohms. IRFBC30 . IR. 1. Q5. MMBT3906TT1. Bipolar, PNP, -40V, -200mA, -200mW. MMBT3906TT1. To be determined. Inductor, 4.0mH, 1.5Apk with 2 secondary windings of 4 turns. L3, L3A,L3B. 25. 3 International Rectifier IRFBC30 . Transistor, MOSFET. Sep 15, 2008 Uses IRFBC30 , SiHFBC30 data and test conditions. PRODUCT SUMMARY. VDS (V). 600. RDS(on) ( ). VGS = 10 V. 2.2. Qg (Max.) (nC). 31.
| Part Number | IRFBC30 |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Single |
| Brand | Silicon |
| Description | MOSFET N-CH 600V 3.6A TO-220AB |
| Series | - |
| Packaging | Tube |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 600V |
| Current - Continuous Drain (Id) @ 25°C | 3.6A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | - |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 31nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 660pF @ 25V |
| Vgs (Max) | - |
| FET Feature | - |
| Power Dissipation (Max) | 74W (Tc) |
| Rds On (Max) @ Id, Vgs | 2.2 Ohm @ 2.2A, 10V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220AB |
| Package / Case | TO-220-3 |
| Image |  |
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