Part Number | IRFBC30SPBF |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Silicon |
Description | MOSFET N-CH 600V 3.6A D2PAK |
Series | - |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 600V |
Current - Continuous Drain (Id) @ 25°C | 3.6A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 31nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 660pF @ 25V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 3.1W (Ta), 74W (Tc) |
Rds On (Max) @ Id, Vgs | 2.2 Ohm @ 2.2A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | D2PAK |
Package / Case | TO-263-3, D²ÂPak (2 Leads + Tab), TO-263AB |
Image |
IRFBC30SPBF
SIILCON
1000
1.3
MY Group (Asia) Limited
IRFBC30SPBF
SILICON7
10000
2.255
Yingxinyuan INT'L (Group) Limited
IRFBC30SPBF
SiliconLabs
5271
3.21
Dedicate Electronics (HK) Limited
IRFBC30SPBF
SILICON LABORATORIES INC
45500
4.165
Analog Technology Limited
IRFBC30SPBF
SILICONLA
50000
5.12
C & I Semiconductors Co., Limited