Part Number | IRFD9110PBF |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Silicon |
Description | MOSFET P-CH 100V 0.7A 4-DIP |
Series | - |
Packaging | Tube |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25°C | 700mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 8.7nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 200pF @ 25V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 1.3W (Ta) |
Rds On (Max) @ Id, Vgs | 1.2 Ohm @ 420mA, 10V |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | 4-DIP, Hexdip, HVMDIP |
Package / Case | 4-DIP (0.300", 7.62mm) |
Image |
IRFD9110PBF
SIILCON
100
1.2
RX ELECTRONICS LIMITED
IRFD9110PBF
SILICON7
575
1.91
Yingxinyuan INT'L (Group) Limited
IRFD9110PBF
SiliconLabs
2500
2.62
Nosin (HK) Electronics Co.
IRFD9110PBF
SILICON LABORATORIES INC
52000
3.33
Siglomax Integrated circuit Co,Ltd
IRFD9110PBF
SILICONLA
11010
4.04
N&S Electronic Co., Limited