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Description
Page 1. IRFR/U9024N. PRELIMINARY. HEXFET Power MOSFET. 6/26/97. Parameter. Typ. Max. Units. R JC. Junction-to-Case. . 3.3. R JA. Page 1. www.irf.com. 1. IRFR9024PbF. IRFU9024PbF. PD- 95732A. 1/10/05. Lead-Free. Page 2. IRFR/U9024PbF. 2 www.irf.com. Page 3 Page 1. IRFR9024NCPbF. IRFU9024NCPbF www.irf.com. 1. 05/31/06. Lead- Free. PD - 96048. (IRFR9024NCPbF). (IRFU9024NCPbF) 0.047 F. Z5U. Q1. IRFU9024 . Q2. IRFU024. D2. MBR160. C2. 330 F. 63V. L1. 62 H. R2. 0.05 . 5V. 2A. C10. 220 F 2. 10V. QUIESCENT CURRENT = 1.5mA . May 13, 1998 Page 1. IRF9540N. HEXFET Power MOSFET. PD - 91437B. Parameter. Max. Units. ID @ TC = 25 C. Continuous Drain Current, VGS @ -
| Part Number | IRFU9024 |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Single |
| Brand | Silicon |
| Description | MOSFET P-CH 60V 8.8A I-PAK |
| Series | - |
| Packaging | Tube |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 8.8A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | - |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 19nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 570pF @ 25V |
| Vgs (Max) | - |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 42W (Tc) |
| Rds On (Max) @ Id, Vgs | 280 mOhm @ 5.3A, 10V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-251AA |
| Package / Case | TO-251-3 Short Leads, IPak, TO-251AA |
| Image |  |
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