Part Number | IRL510PBF |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Silicon |
Description | MOSFET N-CH 100V 5.6A TO-220AB |
Series | - |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25°C | 5.6A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 4V, 5V |
Vgs(th) (Max) @ Id | 2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 6.1nC @ 5V |
Input Capacitance (Ciss) (Max) @ Vds | 250pF @ 25V |
Vgs (Max) | ±10V |
FET Feature | - |
Power Dissipation (Max) | 43W (Tc) |
Rds On (Max) @ Id, Vgs | 540 mOhm @ 3.4A, 5V |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220AB |
Package / Case | TO-220-3 |
Image |
IRL510PBF
SIILCON
220360
0.73
Cinty Int'l (HK) Industry Co., Limited
IRL510PBF
SILICON7
64
1.8525
Yingxinyuan INT'L (Group) Limited
IRL510PBF
SiliconLabs
25
2.975
FLOWER GROUP(HK)CO.,LTD
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SILICON LABORATORIES INC
10065
4.0975
F-power Electronics Co
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SILICONLA
11001
5.22
N&S Electronic Co., Limited