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Description
Nov 8, 2010 IRLD014 , SiHLD014. Vishay Siliconix. FEATURES. Dynamic dV/dt Rating. For Automatic Insertion. End Stackable. Logic-Level Gate Drive. Page 1. Document Number: 90710 www.vishay.com. Revision: 29-Oct-10. 1. R-C Thermal Model Parameters. IRLD014_RC, SiHLD014_RC. Vishay Siliconix. Page 1. IRLD110, SiHLD110 www.vishay.com. Vishay Siliconix. S12-0617-Rev. D, 26-Mar-12. 1. Document Number: 91309. For technical questions Jan 10, 2010 Page 1. IRLR014NPbF. IRLU014NPbF. HEXFET Power MOSFET. S. D. G. Parameter. Typ. Max. Units. R JC. Junction-to-Case. . 5.3. IRLD014 . 60. 200. 1.7. 1.2. 5.6. 4.3. 120. 1.3. IRLD014PBF. 60. 200. 1.7. 1.2. 5.6. 4.3. 120. 1.3. IRLD120. 100. 270a. 1.3. 0.94. 8. 4.7. 120. 1.3. IRLD120PBF. 100.
| Part Number | IRLD014 |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Single |
| Brand | Silicon |
| Description | MOSFET N-CH 60V 1.7A 4-DIP |
| Series | - |
| Packaging | Tube |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 1.7A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | - |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 8.4nC @ 5V |
| Input Capacitance (Ciss) (Max) @ Vds | 400pF @ 25V |
| Vgs (Max) | - |
| FET Feature | - |
| Power Dissipation (Max) | 1.3W (Ta) |
| Rds On (Max) @ Id, Vgs | 200 mOhm @ 1A, 5V |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | 4-DIP, Hexdip, HVMDIP |
| Package / Case | 4-DIP (0.300", 7.62mm) |
| Image |  |
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