Rated 
(5/5) based on 5 customer reviews
(5/5) based on 5 customer reviews
| Part Number | IRLD110 |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Single |
| Brand | Silicon |
| Description | MOSFET N-CH 100V 1A 4-DIP |
| Series | - |
| Packaging | Tube |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25°C | 1A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | - |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 6.1nC @ 5V |
| Input Capacitance (Ciss) (Max) @ Vds | 250pF @ 25V |
| Vgs (Max) | - |
| FET Feature | - |
| Power Dissipation (Max) | 1.3W (Ta) |
| Rds On (Max) @ Id, Vgs | 540 mOhm @ 600mA, 5V |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | 4-DIP, Hexdip, HVMDIP |
| Package / Case | 4-DIP (0.300", 7.62mm) |
| Image |  |
Lowest Price: $1.58
Highest Price: $5.81
1 - 5 of 5 Record(s)
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