Description
VDD = 1.8V 0.1V, VDDQ = 1.8V 0.1V. JEDEC-standard 1.8V I/O (SSTL_18- compatible). Differential data strobe (DQS, DQS#) option. 4n-bit prefetch
Part Number | MT47H128M16RT25E |
Main Category | Integrated Circuits (ICs) |
Sub Category | Memory |
Brand | Silicon |
Description | IC SDRAM 2GBIT 400MHZ 84FBGA |
Series | - |
Packaging | Tray |
Memory Type | Volatile |
Memory Format | DRAM |
Technology | SDRAM - DDR2 |
Memory Size | 2Gb (128M x 16) |
Clock Frequency | 400MHz |
Write Cycle Time - Word, Page | 15ns |
Access Time | 400ps |
Memory Interface | Parallel |
Voltage - Supply | 1.7 V ~ 1.9 V |
Operating Temperature | -40°C ~ 95°C (TC) |
Mounting Type | Surface Mount |
Package / Case | 84-TFBGA |
Supplier Device Package | 84-FBGA (9x12.5) |
Image |
Hot Offer
MT47H128M16RT-25E IT:C
SIILCON
201
1.12
NOSIN (HK) ELECTRONICS CO., LIMITED
MT47H128M16RT-25E IT:C
SILICON7
22
2.4975
HK FEILIDI ELECTRONIC CO., LIMITED
MT47H128M16RT-25E IT:C
SiliconLabs
21251
3.875
Blue star electronics Co.,Limited
MT47H128M16RT-25E
SILICON LABORATORIES INC
99999
5.2525
ICBROS TECHNOLOGY LIMITED
MT47H128M16RT-25E IT:C
SILICONLA
22
6.63
HK JDW ELECTRONIC CO., LIMITED