Part Number | NDS336P |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Silicon |
Description | MOSFET P-CH 20V 1.2A SSOT3 |
Series | - |
Packaging | |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | 1.2A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 8.5nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds | 360pF @ 10V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 500mW (Ta) |
Rds On (Max) @ Id, Vgs | 200 mOhm @ 1.3A, 4.5V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | SuperSOT-3 |
Package / Case | TO-236-3, SC-59, SOT-23-3 |
Image |
NDS336P
SIILCON
43649
0.73
CIS Ltd (CHECK IC SOLUTION LIMITED)
NDS336P
SILICON7
12000
1.88
Ande Electronics Co., Limited
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SiliconLabs
1470
3.03
Pacific Corporation
NDS336P
SILICON LABORATORIES INC
100000
4.18
Bonase Electronics (HK) Co., Limited
NDS336P
SILICONLA
2811
5.33
Belt (HK) Electronics Co