Part Number | SI3424BDV-T1-GE3 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Silicon |
Description | MOSFET N-CH 30V 8A 6TSOP |
Series | TrenchFET |
Packaging | Tape & Reel (TR) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 8A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 19.6nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 735pF @ 15V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 2.1W (Ta), 2.98W (Tc) |
Rds On (Max) @ Id, Vgs | 28 mOhm @ 7A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | 6-TSOP |
Package / Case | SOT-23-6 Thin, TSOT-23-6 |
Image |
SI3424BDV-T1-GE3
SIILCON
45933
0.96
CIS Ltd (CHECK IC SOLUTION LIMITED)
Si3424BDV-T1-GE3
SILICON7
13190
2.27
Ande Electronics Co., Limited
SI3424BDV-T1-GE3
SiliconLabs
12000
3.58
Shenzhen Glow Technolgoy Co., Ltd
Si3424BDV-T1-GE3
SILICON LABORATORIES INC
3000
4.89
Yingxinyuan INT'L (Group) Limited
SI3424BDV-T1-GE3
SILICONLA
8096
6.2
LYT (HONGKONG) CO., LIMITED