Silicon

Description

Ordering Information: Si3812DV - T1 -GE3 (Lead (Pb)-free and Halogen-free). K. A. D. G. S. N-Channel MOSFET. Note: a. Surface mounted on 1 x 1 FR4 board. ABSOLUTE MAXIMUM RATINGS (TA = 25 C, unless otherwise noted). 0.36. 1.8. 2.4. 1.15. Si3812DV . N. Single Plus. Integrated. Schottky. 20. 20. 0.125. 0.2. 2.4. 2.1. 1.15. ChipFET 1206-8. Si5855DC. P. Single Plus. Integrated. Schottky. -20. 20. 0.11. 0.16. 0.24. 3.6. 5.1. 2.1. LITTLE FOOT Plus Schottky, continued VDS = 20 V. TSOP-6. Si3812DV . Single N-Channel MOSFET with integrated Schottky;. VDS = 20 V; ID = 2.4 A. rDS(on) = 125 milliohms. SMD. TSOP-6. Si3851DV. Single P-Channel MOSFET with integrated Schottky;. VDS = -30 V; ID = -1.8 A. Oct 10, 2002 switching losses can be separated into turn-on (from t1 to t2), turn-off (from t5 to t6 ), and .. Si3812DV . 20. 20. 0.1250. 0.2000. 2.1. 0.3. 0.4. 0.6. 2.4. 1.2. TSOP-6. Si3850DV. 20. 12. 0.5000. 0.8. 0.3. 0.2. 0.6. 1.2. 1.3. TSOP-6.