Silicon

Description

Vishay Siliconix. Si4435BDY. Document Number: 72123. S09-0767-Rev. D, 04- May-09 www.vishay.com. 1. P-Channel 30-V (D-S) MOSFET. FEATURES. Oct 14, 1999 Parameter. Max. Units. VDS. Drain- Source Voltage. -30. V. ID @ TA = 25 C. Continuous Drain Current, VGS @ -10V. -8.0. ID @ TA= 70 C. 5V docking station is the preferred power source. Always connect to docking station path even if USB is present. 5V-USB. 5V-DOCK. Q3,Q4 Si4435 . Q1 May 16, 2011 Power Supplies, five Si4410 N-Channel TrenchFET. . Power. MOSFETs, one Si4435 P-Channel TrenchFET Power. MOSFET, and two Si9712 PACK. THERMISTER. SENSE. 5.6 k . 1%. R3. 118 k . 1%. R4. /DPMDET. 10 k . R6. ACOP. Q1 (ACFET). SI4435 . 10 F. C6. C15. 0.1 F. C16. 0.47 F. 0.1 F.