Part Number | SI5447DC-T1-GE3 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Silicon |
Description | MOSFET P-CH 20V 3.5A 1206-8 |
Series | TrenchFET |
Packaging | |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | 3.5A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 450mV @ 250µA (Min) |
Gate Charge (Qg) (Max) @ Vgs | 10nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds | - |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 1.3W (Ta) |
Rds On (Max) @ Id, Vgs | 76 mOhm @ 3.5A, 4.5V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | 1206-8 ChipFET |
Package / Case | 8-SMD, Flat Lead |
Image |
SI5447DC-T1-GE3
SIILCON
55200
0.6
WEISOK ELECTRONICS (HK) TECHNOLOGY LIMITED
SI5447DC-T1-GE3
SILICON7
5000000
1.5625
Hongkong Shengshi Electronics Limited
SI5447DC-T1-GE3
SiliconLabs
5000000
2.525
Hongkong Shengshi Electronics Limited
SI5447DC-T1-GE3
SILICON LABORATORIES INC
316
3.4875
Gallop Great Holdings (Hong Kong) Limited
SI5447DC-T1-GE3
SILICONLA
36850
4.45
Z.H.T TECHNOLOGY HK LIMITED