Part Number | SI5499DCT1E3 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Silicon |
Description | MOSFET P-CH 8V 6A 1206-8 |
Series | TrenchFET |
Packaging | |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 8V |
Current - Continuous Drain (Id) @ 25°C | 6A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 800mV @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 35nC @ 8V |
Input Capacitance (Ciss) (Max) @ Vds | 1290pF @ 4V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 2.5W (Ta), 6.2W (Tc) |
Rds On (Max) @ Id, Vgs | 36 mOhm @ 5.1A, 4.5V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | 1206-8 ChipFET |
Package / Case | 8-SMD, Flat Lead |
Image |
SI5499DC-T1-E3
SIILCON
83000
1.42
Yingxinyuan INT'L (Group) Limited
SI5499DC-T1-E3
SILICON7
1000
2.61
MY Group (Asia) Limited
SI5499DCT1E3
SiliconLabs
4672
3.8
Bonase Electronics (HK) Co., Limited
SI5499DC-T1-GE3
SILICON LABORATORIES INC
18000
4.99
MY Group (Asia) Limited
SI5499DC-T1-GE3
SILICONLA
5000000
6.18
Hongkong Shengshi Electronics Limited