Part Number | SI7112DN-T1-E3 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Silicon |
Description | MOSFET N-CH 30V 11.3A 1212-8 |
Series | TrenchFET |
Packaging | Cut Tape (CT) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 11.3A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Vgs(th) (Max) @ Id | 1.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 27nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds | 2610pF @ 15V |
Vgs (Max) | ±12V |
FET Feature | - |
Power Dissipation (Max) | 1.5W (Ta) |
Rds On (Max) @ Id, Vgs | 7.5 mOhm @ 17.8A, 10V |
Operating Temperature | -50°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PowerPAK 1212-8 |
Package / Case | PowerPAK 1212-8 |
Image |
SI7112DN-T1-E3
SIILCON
10000
0.64
Hong Kong Capital Industrial Co.,Ltd
SI7112DN-T1-E3
SILICON7
12870
1.63
NOSIN (HK) ELECTRONICS CO., LIMITED
SI7112DN-T1-E3
SiliconLabs
29057
2.62
N&S Electronic Co., Limited
SI7112DN-T1-E3
SILICON LABORATORIES INC
4868000
3.61
Shenzhen WTX Capacitor Co., Ltd.
SI7112DN-T1-E3
SILICONLA
18000
4.6
MY Group (Asia) Limited