Part Number | SI8407DB-T2-E1 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Silicon |
Description | MOSFET P-CH 20V 5.8A 2X2 6-MFP |
Series | TrenchFET |
Packaging | |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | 5.8A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 900mV @ 350µA |
Gate Charge (Qg) (Max) @ Vgs | 50nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds | - |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 1.47W (Ta) |
Rds On (Max) @ Id, Vgs | 27 mOhm @ 1A, 4.5V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | 6-Micro Foot |
Package / Case | 6-MICRO FOOTCSP |
Image |
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