Part Number | SIHF30N60E-GE3 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Silicon |
Description | MOSFET N-CH 600V 29A TO220 |
Series | E |
Packaging | Tape & Reel (TR) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 600V |
Current - Continuous Drain (Id) @ 25°C | 29A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 130nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 2600pF @ 100V |
Vgs (Max) | ±30V |
FET Feature | - |
Power Dissipation (Max) | 37W (Tc) |
Rds On (Max) @ Id, Vgs | 125 mOhm @ 15A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220 Full Pack |
Package / Case | TO-220-3 Full Pack |
Image |
Hot Offer
SIHF30N60E-GE3
SIILCON
2000
0.74
TROXIN INTERNATIONAL LIMITED
SIHF30N60E-GE3
SILICON7
150
1.455
Good Choice Enterprise Co., Ltd.
SIHF30N60E-GE3
SiliconLabs
18000
2.17
CIS Ltd (CHECK IC SOLUTION LIMITED)
SIHF30N60E-GE3
SILICON LABORATORIES INC
4000
2.885
LYT (HONGKONG) CO., LIMITED
SIHF30N60E-GE3
SILICONLA
1000
3.6
Bonase Electronics (HK) Co., Limited