Part Number | SIHP30N60E-E3 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Silicon |
Description | MOSFET N-CH 600V 29A TO220AB |
Series | - |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 600V |
Current - Continuous Drain (Id) @ 25°C | 29A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 130nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 2600pF @ 100V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 250W (Tc) |
Rds On (Max) @ Id, Vgs | 125 mOhm @ 15A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220AB |
Package / Case | TO-220-3 |
Image |
SIHP30N60E-E3
SIILCON
4700
0.75
Gallop Great Holdings (Hong Kong) Limited
SIHP30N60E-E3
SILICON7
5304
1.815
Viassion Technology Co., Limited
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SiliconLabs
1000
2.88
MY Group (Asia) Limited
SIHP30N60E-E3
SILICON LABORATORIES INC
160
3.945
King-Pai Technology (HK) Co.,Limited
SIHP30N60E-E3
SILICONLA
160
5.01
FUDATONGHE LIMITED