Part Number | SIHP8N50D-GE3 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Silicon |
Description | MOSFET N-CH 500V 8.7A TO220AB |
Series | - |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 500V |
Current - Continuous Drain (Id) @ 25°C | 8.7A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 30nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 527pF @ 100V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 156W (Tc) |
Rds On (Max) @ Id, Vgs | 850 mOhm @ 4A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220AB |
Package / Case | TO-220-3 |
Image |
SIHP8N50D-GE3
SIILCON
5984
0.14
SUNGLOW (HONGKONG) TECHNOLOGY LIMITED
SIHP8N50D-GE3
SILICON7
6764
1.195
Cinty Int'l (HK) Industry Co., Limited
SIHP8N50D-GE3
SiliconLabs
647
2.25
ZHUOYUEHENGSHENG ELECTRONICS (HK) LIMITED
SIHP8N50D-GE3
SILICON LABORATORIES INC
2488
3.305
MY Group (Asia) Limited
SIHP8N50D-GE3
SILICONLA
1321
4.36
RX ELECTRONICS LIMITED