Part Number | SIHW70N60EF-GE3 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Silicon |
Description | MOSFET N-CH 600V 70A TO-247AD |
Series | - |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 600V |
Current - Continuous Drain (Id) @ 25°C | 70A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 380nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 7500pF @ 100V |
Vgs (Max) | ±30V |
FET Feature | - |
Power Dissipation (Max) | 520W (Tc) |
Rds On (Max) @ Id, Vgs | 38 mOhm @ 35A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-247AD |
Package / Case | TO-247-3 |
Image |
SIHW70N60EF-GE3
SIILCON
14000
0.78
MY Group (Asia) Limited
SIHW70N60EF-GE3
SILICON7
451
1.875
KDH SEMICONDUCTOR CO., LIMITED
SIHW70N60EF-GE3
SiliconLabs
29
2.97
RX ELECTRONICS LIMITED
SIHW70N60EF-GE3
SILICON LABORATORIES INC
451
4.065
KDH SEMICONDUCTOR CO., LIMITED
SIHW70N60EF-GE3
SILICONLA
14000
5.16
MY Group (Asia) Limited